Electron Microscopy
Prof. Dr. E.V. Suvorov, Dr. A.S. Aronin, Dr. V.A. Goncharov, Dr. S.A. Zver'kov
The main direction of research problems of the laboratory is connected
with the electron-microscopic investigation of the crystal structure defects
in semiconductor single crystals grown by special methods (silicon grown
on the carbon foil for the elements of solar energetics); the study of
defects and structure phase transformations in HTSC and fullerite single
crystals (YBaCuO, BiSrCaCuO, LaCuO, C60, C70). In particular, it has
been shown that the structure of planar defects (twinning boundaries and
structure modulations) in BiSrCaCuO and LaCuO single crystals is closely
connected with the ordering of oxygen atoms in oxygen vacancies. It was
revealed also that silicon single crystals twinned multivariately at
temperatures lower than 600oC are deformed by means of the specific
mechanism of the dislocation nucleation and motion in twinning
boundaries transforming them into incoherent [1-8].
Another research direction is the investigation of (1) the formation
conditions and reasons for the thermal stability of transition metal-based
nanocrystalline alloys, (2) the "structure-properties" correlation in
nanocrystalline materials, (3) phase transformations in amorphous alloys
under different actions, (4) metastable phases: conditions of stability and
peculiarities of decomposition [9-20].